RQ7G080BGTCR

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Overview of RQ7G080BGTCR

Part NumberRQ7G080BGTCR
ManufacturerROHM Semiconductor
DescriptionNCH 40V 8A, TSMT8, POWER MOSFET
DatasheetsDownload RQ7G080BGTCR Datasheet PDFPDF Icon
Price for RQ7G080BGTCR

Specification of RQ7G080BGTCR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
10.6 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
530 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TSMT8
Package / Case
8-SMD, Flat Lead

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