SCT2H12NYTB

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Overview of SCT2H12NYTB

Part NumberSCT2H12NYTB
ManufacturerROHM Semiconductor
DescriptionSICFET N-CH 1700V 4A TO268
DatasheetsDownload SCT2H12NYTB Datasheet PDFPDF Icon
Price for SCT2H12NYTB

Specification of SCT2H12NYTB

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id
4V @ 410A
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 18 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
184 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
44W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268
Package / Case
TO-268-3, DPak (2 Leads + Tab), TO-268AA

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