SI2342DS-T1-BE3

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Overview of SI2342DS-T1-BE3

Part NumberSI2342DS-T1-BE3
ManufacturerVishay / Siliconix
DescriptionN-CHANNEL 8-V (D-S) MOSFET
DatasheetsDownload SI2342DS-T1-BE3 Datasheet PDFPDF Icon
Price for SI2342DS-T1-BE3

Specification of SI2342DS-T1-BE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25C
6A (Ta), 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250A
Gate Charge (Qg) (Max) @ Vgs
15.8 nC @ 4.5 V
Vgs (Max)
5V
Input Capacitance (Ciss) (Max) @ Vds
1070 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta), 2.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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