SI3442DV

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Overview of SI3442DV

Part NumberSI3442DV
ManufacturerFairchild Semiconductor
DescriptionMOSFET N-CH 20V 4.1A SUPERSOT6
DatasheetsDownload SI3442DV Datasheet PDFPDF Icon
Price for SI3442DV

Specification of SI3442DV

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250A
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Vgs (Max)
8V
Input Capacitance (Ciss) (Max) @ Vds
365 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT-6
Package / Case
SOT-23-6 Thin, TSOT-23-6

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