SI3443DDV-T1-BE3

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Overview of SI3443DDV-T1-BE3

Part NumberSI3443DDV-T1-BE3
ManufacturerVishay / Siliconix
DescriptionP-CHANNEL 20-V (D-S) MOSFET
DatasheetsDownload SI3443DDV-T1-BE3 Datasheet PDFPDF Icon
Price for SI3443DDV-T1-BE3

Specification of SI3443DDV-T1-BE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
4A (Ta), 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
47mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 8 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
970 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta), 2.7W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6

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