SI7112DN-T1-GE3

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Overview of SI7112DN-T1-GE3

Part NumberSI7112DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 30V 11.3A PPAK1212-8
DatasheetsDownload SI7112DN-T1-GE3 Datasheet PDFPDF Icon
Price for SI7112DN-T1-GE3

Specification of SI7112DN-T1-GE3

Status
Active
Series
TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 17.8A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 4.5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
2610 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-50C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8
Package / Case
PowerPAK 1212-8

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