SI7116BDN-T1-GE3

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Overview of SI7116BDN-T1-GE3

Part NumberSI7116BDN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 40V 18.4A/65A PPAK
DatasheetsDownload SI7116BDN-T1-GE3 Datasheet PDFPDF Icon
Price for SI7116BDN-T1-GE3

Specification of SI7116BDN-T1-GE3

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
18.4A (Ta), 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
7.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1915 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5W (Ta), 62.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8
Package / Case
PowerPAK 1212-8

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