SI7120DN-T1-GE3

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Overview of SI7120DN-T1-GE3

Part NumberSI7120DN-T1-GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 60V 6.3A 1212-8
DatasheetsDownload SI7120DN-T1-GE3 Datasheet PDFPDF Icon
Price for SI7120DN-T1-GE3

Specification of SI7120DN-T1-GE3

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK 1212-8
Package / Case
PowerPAK 1212-8

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