SIR122DP-T1-RE3

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Overview of SIR122DP-T1-RE3

Part NumberSIR122DP-T1-RE3
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 80V 16.7A/59.6A PPAK
DatasheetsDownload SIR122DP-T1-RE3 Datasheet PDFPDF Icon
Price for SIR122DP-T1-RE3

Specification of SIR122DP-T1-RE3

Status
Active
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
16.7A (Ta), 59.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
7.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 65.7W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK SO-8
Package / Case
PowerPAK SO-8

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