SQ2337ES-T1_GE3

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Overview of SQ2337ES-T1_GE3

Part NumberSQ2337ES-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 80V 2.2A SOT23-3
DatasheetsDownload SQ2337ES-T1_GE3 Datasheet PDFPDF Icon
Price for SQ2337ES-T1_GE3

Specification of SQ2337ES-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
290mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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