SSM6J505NU,LF

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Overview of SSM6J505NU,LF

Part NumberSSM6J505NU,LF
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 12V 12A 6UDFNB
DatasheetsDownload SSM6J505NU,LF Datasheet PDFPDF Icon
Price for SSM6J505NU,LF

Specification of SSM6J505NU,LF

Status
Active
Series
U-MOSVI
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
12mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
37.6 nC @ 4.5 V
Vgs (Max)
6V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.25W (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-UDFNB (2x2)
Package / Case
6-WDFN Exposed Pad

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