STI10N62K3

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Overview of STI10N62K3

Part NumberSTI10N62K3
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 620V 8.4A I2PAK
DatasheetsDownload STI10N62K3 Datasheet PDFPDF Icon
Price for STI10N62K3

Specification of STI10N62K3

Status
Obsolete
Series
SuperMESH3™
Package
Tube
Supplier
STMicroelectronics
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
620 V
Current - Continuous Drain (Id) @ 25C
8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100A
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, IPak, TO-262AA

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