TK170V65Z,LQ

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Overview of TK170V65Z,LQ

Part NumberTK170V65Z,LQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 650V 18A 5DFN
DatasheetsDownload TK170V65Z,LQ Datasheet PDFPDF Icon
Price for TK170V65Z,LQ

Specification of TK170V65Z,LQ

Status
Active
Series
DTMOSVI
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 730A
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1635 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
4-DFN-EP (8x8)
Package / Case
4-VSFN Exposed Pad

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