TK17E65W,S1X

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Overview of TK17E65W,S1X

Part NumberTK17E65W,S1X
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 650V 17.3A TO220
DatasheetsDownload TK17E65W,S1X Datasheet PDFPDF Icon
Price for TK17E65W,S1X

Specification of TK17E65W,S1X

Status
Active
Series
DTMOSIV
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
17.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id
3.5V @ 900A
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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