TK2P60D(TE16L1,NQ)

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Overview of TK2P60D(TE16L1,NQ)

Part NumberTK2P60D(TE16L1,NQ)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 600V 2A PW-MOLD
DatasheetsDownload TK2P60D(TE16L1,NQ) Datasheet PDFPDF Icon
Price for TK2P60D(TE16L1,NQ)

Specification of TK2P60D(TE16L1,NQ)

Status
Obsolete
Series
π-MOSVII
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PW-MOLD
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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