TK30S06K3L(T6L1,NQ

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Overview of TK30S06K3L(T6L1,NQ

Part NumberTK30S06K3L(T6L1,NQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 60V 30A DPAK
DatasheetsDownload TK30S06K3L(T6L1,NQ Datasheet PDFPDF Icon
Price for TK30S06K3L(T6L1,NQ

Specification of TK30S06K3L(T6L1,NQ

Status
Obsolete
Series
U-MOSIV
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
18Ohm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
58W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK+
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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