TK31Z60X,S1F

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Overview of TK31Z60X,S1F

Part NumberTK31Z60X,S1F
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionX35 PB-F POWER MOSFET TRANSISTOR
DatasheetsDownload TK31Z60X,S1F Datasheet PDFPDF Icon
Price for TK31Z60X,S1F

Specification of TK31Z60X,S1F

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
88mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L(T)
Package / Case
TO-247-4

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