TK31J60W,S1VQ

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Overview of TK31J60W,S1VQ

Part NumberTK31J60W,S1VQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 600V 30.8A TO3P
DatasheetsDownload TK31J60W,S1VQ Datasheet PDFPDF Icon
Price for TK31J60W,S1VQ

Specification of TK31J60W,S1VQ

Status
Active
Series
DTMOSIV
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
88mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3

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