TK3A90E,S4X

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Overview of TK3A90E,S4X

Part NumberTK3A90E,S4X
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionPB-F POWER MOSFET TRANSISTOR TO-
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Price for TK3A90E,S4X

Specification of TK3A90E,S4X

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25C
2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.6Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
650 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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