TK40J20D,S1F(O

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Overview of TK40J20D,S1F(O

Part NumberTK40J20D,S1F(O
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 200V 40A TO3P
Price for TK40J20D,S1F(O

Specification of TK40J20D,S1F(O

Status
Active
Series
π-MOSVIII
Package
Tray
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25C
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
44mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4300 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
260W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3

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