TK40P03M1(T6RSS-Q)

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Overview of TK40P03M1(T6RSS-Q)

Part NumberTK40P03M1(T6RSS-Q)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 30V 40A DP
DatasheetsDownload TK40P03M1(T6RSS-Q) Datasheet PDFPDF Icon
Price for TK40P03M1(T6RSS-Q)

Specification of TK40P03M1(T6RSS-Q)

Status
Obsolete
Series
U-MOSVI-H
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 100A
Gate Charge (Qg) (Max) @ Vgs
17.5 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

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