TK3R2E06PL,S1X

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Overview of TK3R2E06PL,S1X

Part NumberTK3R2E06PL,S1X
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionX35 PB-F POWER MOSFET TRANSISTOR
DatasheetsDownload TK3R2E06PL,S1X Datasheet PDFPDF Icon
Price for TK3R2E06PL,S1X

Specification of TK3R2E06PL,S1X

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 700A
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
168W (Tc)
Operating Temperature
175C
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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