TPCC8002-H(TE12LQM

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Overview of TPCC8002-H(TE12LQM

Part NumberTPCC8002-H(TE12LQM
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 30V 22A 8TSON
DatasheetsDownload TPCC8002-H(TE12LQM Datasheet PDFPDF Icon
Price for TPCC8002-H(TE12LQM

Specification of TPCC8002-H(TE12LQM

Status
Obsolete
Series
U-MOSV-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 30W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-VDFN Exposed Pad

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