TSM16ND50CI C0G

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Overview of TSM16ND50CI C0G

Part NumberTSM16ND50CI C0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 500V 16A ITO220
Price for TSM16ND50CI C0G

Specification of TSM16ND50CI C0G

Status
Active
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
2551 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
59.5W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220
Package / Case
TO-220-3 Full Pack, Isolated Tab

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