WNSC2D30650WQ

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Overview of WNSC2D30650WQ

Part NumberWNSC2D30650WQ
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionSILICON CARBIDE SCHOTTKY DI
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Price for WNSC2D30650WQ

Specification of WNSC2D30650WQ

Status
Active
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
30A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 30 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 A @ 650 V
Capacitance @ Vr, F
980pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247-2
Operating Temperature - Junction
175C

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