WNSC5D08650X6Q

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Overview of WNSC5D08650X6Q

Part NumberWNSC5D08650X6Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARBIDE 650V 8A TO220F
Price for WNSC5D08650X6Q

Specification of WNSC5D08650X6Q

Status
Active
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 A @ 650 V
Capacitance @ Vr, F
267pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
-55C ~ 175C

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