WNSC5D08650T6J

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Overview of WNSC5D08650T6J

Part NumberWNSC5D08650T6J
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARBIDE 650V 8A 5DFN
Price for WNSC5D08650T6J

Specification of WNSC5D08650T6J

Status
Active
Package
Tape & Reel (TR)
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 A @ 650 V
Capacitance @ Vr, F
267pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
4-VSFN Exposed Pad
Supplier Device Package
5-DFN (8x8)
Operating Temperature - Junction
-55C ~ 175C

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