BSC118N10NSGATMA1

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Overview of BSC118N10NSGATMA1

Part NumberBSC118N10NSGATMA1
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 100V 11A/71A TDSON
DatasheetsDownload BSC118N10NSGATMA1 Datasheet PDFPDF Icon
Price for BSC118N10NSGATMA1

Specification of BSC118N10NSGATMA1

Status
Active
Series
OptiMOS™
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
11A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 70A
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN

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