BSM180C12P3C202

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Overview of BSM180C12P3C202

Part NumberBSM180C12P3C202
ManufacturerROHM Semiconductor
DescriptionSICFET N-CH 1200V 180A MODULE
DatasheetsDownload BSM180C12P3C202 Datasheet PDFPDF Icon
Price for BSM180C12P3C202

Specification of BSM180C12P3C202

Status
Active
Package
Bulk
Supplier
Rohm Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
9000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
880W (Tc)
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
Module
Package / Case
Module

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