EPC2105

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of EPC2105

Part NumberEPC2105
ManufacturerEPC
DescriptionGAN TRANS ASYMMETRICAL HALF BRID
DatasheetsDownload EPC2105 Datasheet PDFPDF Icon
Price for EPC2105

Specification of EPC2105

Status
Active
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
80V
Current - Continuous Drain (Id) @ 25C
9.5A, 38A
Rds On (Max) @ Id, Vgs
14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 40V, 1100pF @ 40V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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