G3R20MT12N

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Overview of G3R20MT12N

Part NumberG3R20MT12N
ManufacturerGeneSiC Semiconductor
DescriptionSIC MOSFET N-CH 105A SOT227
DatasheetsDownload G3R20MT12N Datasheet PDFPDF Icon
Price for G3R20MT12N

Specification of G3R20MT12N

Status
Active
Series
G3R™
Package
Tube
Supplier
GeneSiC Semiconductor
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
219 nC @ 15 V
Vgs (Max)
+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds
5873 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
365W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227
Package / Case
SOT-227-4, miniBLOC

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