G3S12010C

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Overview of G3S12010C

Part NumberG3S12010C
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARB 1.2KV 33.2A TO252
DatasheetsDownload G3S12010C Datasheet PDFPDF Icon
Price for G3S12010C

Specification of G3S12010C

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
33.2A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
765pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252
Operating Temperature - Junction
-55C ~ 175C

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