G4S06508CT

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Overview of G4S06508CT

Part NumberG4S06508CT
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIL CARBIDE 650V 24A TO252
DatasheetsDownload G4S06508CT Datasheet PDFPDF Icon
Price for G4S06508CT

Specification of G4S06508CT

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
24A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 650 V
Capacitance @ Vr, F
395pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252
Operating Temperature - Junction
-55C ~ 175C

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