GAN080-650EBEZ

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Overview of GAN080-650EBEZ

Part NumberGAN080-650EBEZ
ManufacturerNexperia
Description650 V, 80 MOHM GALLIUM NITRIDE (
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Price for GAN080-650EBEZ

Specification of GAN080-650EBEZ

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Nexperia USA Inc.
FET Type
P-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V
Rds On (Max) @ Id, Vgs
80mOhm @ 8A, 6V
Vgs(th) (Max) @ Id
2.5V @ 30.7mA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 6 V
Vgs (Max)
+7V, -6V
Input Capacitance (Ciss) (Max) @ Vds
225 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
240W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Supplier Device Package
DFN8080-8
Package / Case
8-VDFN Exposed Pad

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