GT007N04TL

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Overview of GT007N04TL

Part NumberGT007N04TL
ManufacturerGoford Semiconductor
DescriptionN40V,150A,RD<1.5M@10V,VTH1.0V~2.
Price for GT007N04TL

Specification of GT007N04TL

Status
Active
Package
Tape & Reel (TR)
Supplier
Goford Semiconductor
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
163 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
7363 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
156W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TOLL-8L
Package / Case
8-PowerSFN

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