IRFB9N30A

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Overview of IRFB9N30A

Part NumberIRFB9N30A
ManufacturerVishay / Siliconix
DescriptionMOSFET N-CH 300V 9.3A TO220AB
DatasheetsDownload IRFB9N30A Datasheet PDFPDF Icon
Price for IRFB9N30A

Specification of IRFB9N30A

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
450mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

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