NXH010P120MNF1PNG

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Overview of NXH010P120MNF1PNG

Part NumberNXH010P120MNF1PNG
Manufactureronsemi
DescriptionPIM F1 SIC HALFBRIDGE 1200V 10MO
DatasheetsDownload NXH010P120MNF1PNG Datasheet PDFPDF Icon
Price for NXH010P120MNF1PNG

Specification of NXH010P120MNF1PNG

Status
Active
Package
Tray
Supplier
onsemi
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25C
114A (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id
4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs
454nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
4707pF @ 800V
Power - Max
250W (Tj)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
-

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