NXPSC08650X6Q

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Overview of NXPSC08650X6Q

Part NumberNXPSC08650X6Q
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARBIDE 650V 8A TO220F
DatasheetsDownload NXPSC08650X6Q Datasheet PDFPDF Icon
Price for NXPSC08650X6Q

Specification of NXPSC08650X6Q

Status
Last Time Buy
Package
Bulk
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
230 A @ 650 V
Capacitance @ Vr, F
260pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack, Isolated Tab
Supplier Device Package
TO-220F
Operating Temperature - Junction
175C (Max)

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