SQ2325ES-T1_GE3

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Overview of SQ2325ES-T1_GE3

Part NumberSQ2325ES-T1_GE3
ManufacturerVishay / Siliconix
DescriptionMOSFET P-CH 150V 840MA TO236
DatasheetsDownload SQ2325ES-T1_GE3 Datasheet PDFPDF Icon
Price for SQ2325ES-T1_GE3

Specification of SQ2325ES-T1_GE3

Status
Active
Series
Automotive, AEC-Q101, TrenchFET®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Vishay Siliconix
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
840mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.77Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3W (Tc)
Operating Temperature
-55C ~ 175C (TA)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3

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