TK160F10N1,LXGQ

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Overview of TK160F10N1,LXGQ

Part NumberTK160F10N1,LXGQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 100V 160A TO220SM
DatasheetsDownload TK160F10N1,LXGQ Datasheet PDFPDF Icon
Price for TK160F10N1,LXGQ

Specification of TK160F10N1,LXGQ

Status
Not For New Designs
Series
U-MOSVIII-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
121 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
8510 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
375W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
TO-220SM(W)
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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