TK16A60W,S4VX

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Overview of TK16A60W,S4VX

Part NumberTK16A60W,S4VX
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 600V 15.8A TO220SIS
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Price for TK16A60W,S4VX

Specification of TK16A60W,S4VX

Status
Active
Series
DTMOSIV
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 790A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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