TK16J60W,S1VE

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Overview of TK16J60W,S1VE

Part NumberTK16J60W,S1VE
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionX35 PB-F POWER MOSFET TRANSISTOR
DatasheetsDownload TK16J60W,S1VE Datasheet PDFPDF Icon
Price for TK16J60W,S1VE

Specification of TK16J60W,S1VE

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25C
15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 790A
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
130W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3

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