TK16A55D(STA4,Q,M)

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Overview of TK16A55D(STA4,Q,M)

Part NumberTK16A55D(STA4,Q,M)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 550V 16A TO220SIS
DatasheetsDownload TK16A55D(STA4,Q,M) Datasheet PDFPDF Icon
Price for TK16A55D(STA4,Q,M)

Specification of TK16A55D(STA4,Q,M)

Status
Active
Series
π-MOSVII
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
550 V
Current - Continuous Drain (Id) @ 25C
16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
330mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack

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