EPC2101ENGRT

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Overview of EPC2101ENGRT

Part NumberEPC2101ENGRT
ManufacturerEPC
DescriptionGAN TRANS ASYMMETRICAL HALF BRID
DatasheetsDownload EPC2101ENGRT Datasheet PDFPDF Icon
Price for EPC2101ENGRT

Specification of EPC2101ENGRT

Status
Discontinued at Digi-Key
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
9.5A, 38A
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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