G3S12010A

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Overview of G3S12010A

Part NumberG3S12010A
ManufacturerGlobal Power Technology Co. Ltd
DescriptionDIODE SIC 1.2KV 34.8A TO220AC
DatasheetsDownload G3S12010A Datasheet PDFPDF Icon
Price for G3S12010A

Specification of G3S12010A

Status
Active
Package
Bulk
Supplier
Global Power Technology Co. Ltd
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
34.8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
50 A @ 1200 V
Capacitance @ Vr, F
770pF @ 0V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
-55C ~ 175C

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