GAN063-650WSAQ

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Overview of GAN063-650WSAQ

Part NumberGAN063-650WSAQ
ManufacturerNexperia
DescriptionGANFET N-CH 650V 34.5A TO247-3
DatasheetsDownload GAN063-650WSAQ Datasheet PDFPDF Icon
Price for GAN063-650WSAQ

Specification of GAN063-650WSAQ

Status
Active
Series
Automotive, AEC-Q101
Package
Tube
Supplier
Nexperia USA Inc.
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
143W (Ta)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3

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