NXPSC08650DJ

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Overview of NXPSC08650DJ

Part NumberNXPSC08650DJ
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARBIDE 650V 8A DPAK
DatasheetsDownload NXPSC08650DJ Datasheet PDFPDF Icon
Price for NXPSC08650DJ

Specification of NXPSC08650DJ

Status
Last Time Buy
Package
Tape & Reel (TR)
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
230 A @ 650 V
Capacitance @ Vr, F
260pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
DPAK
Operating Temperature - Junction
175C (Max)

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