EPC2101

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of EPC2101

Part NumberEPC2101
ManufacturerEPC
DescriptionGAN TRANS ASYMMETRICAL HALF BRID
DatasheetsDownload EPC2101 Datasheet PDFPDF Icon
Price for EPC2101

Specification of EPC2101

Status
Active
Series
eGaN®
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
EPC
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
9.5A, 38A
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA, 2.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V, 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V, 1200pF @ 30V
Power - Max
-
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die

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