G3S12006B

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Overview of G3S12006B

Part NumberG3S12006B
ManufacturerGlobal Power Technology-GPT
DescriptionSIC SCHOTTKY DIODE 1200V 6A 3-PI
DatasheetsDownload G3S12006B Datasheet PDFPDF Icon
Price for G3S12006B

Specification of G3S12006B

Status
Active
Package
Cut Tape (CT),Tape & Box (TB)
Supplier
Global Power Technology-GPT
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io) (per Diode)
14A (DC)
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 3 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 A @ 1200 V
Operating Temperature - Junction
-55C ~ 175C
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247AB

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