NXPSC08650BJ

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Overview of NXPSC08650BJ

Part NumberNXPSC08650BJ
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARBIDE 650V 8A D2PAK
DatasheetsDownload NXPSC08650BJ Datasheet PDFPDF Icon
Price for NXPSC08650BJ

Specification of NXPSC08650BJ

Status
Last Time Buy
Package
Tape & Reel (TR)
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
230 A @ 650 V
Capacitance @ Vr, F
260pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
Operating Temperature - Junction
175C (Max)

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